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DMP2004DMK
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Pulsed Drain Current
Characteristic
Symbol
V DSS
V GSS
I D
I DM
Value
-20
±8
-550
-1.9
Units
V
V
mA
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J, T STG
Value
500
250
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
IDSS
I GSS
-20
?
?
?
?
?
?
-1.0
± 1.0
V
μ A
μ A
V GS = 0V, I D = -250 μ A
V DS = -20V, V GS = 0V
V GS = ± 4.5V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
V GS(th)
R DS (ON)
-0.5
?
?
0.7
1.1
-1.0
0.9
1.4
V
Ω
V DS = V GS , I D = -250 μ A
V GS = -4.5V, I D = -430mA
V GS = -2.5V, I D = -300mA
1.7
2.0
V GS = -1.8V, I D = -150mA
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
|Y fs |
V SD
200
-0.5
?
?
?
-1.2
mS
V
V DS =10V, I D = -0.2A
V GS = 0V, I S = 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
?
?
?
175
30
20
pF
pF
pF
V DS = -16V, V GS = 0V
f = 1.0MHz
Notes:
5.
6.
Device mounted on FR-4 PCB.
Short duration pulse test used to minimize self-heating effect.
DMP2004DMK
Document number: DS30939 Rev. 4 - 2
2 of 5
www.diodes.com
August 2012
? Diodes Incorporated
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